IPB180N10S4-02 optimos tm -t2 power-transistor features ? n-channel - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25c, v gs =10v 1) 180 a t c =100c, v gs =10v 2) 171 pulsed drain current 2) i d,pulse t c =25c 720 avalanche energy, single pulse 2) e as i d =90a 1110 mj avalanche current, single pulse i as - 180 a gate source voltage v gs -20v power dissipation p tot t c =25c 300 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - - 55/175/56 value v ds 100 v r ds(on) 2.5 m i d 180 a product summary pg-to263-7-3 type package marking IPB180N10S4-02 pg-to263-7-3 4n1002 r ev. 1.0 page 1 2013-01-30
IPB180N10S4-02 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc ---0.5k/w smd version, device on pcb r thja minimal footprint - - 62 6cm 2 cooling area 3) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =275a 2.0 2.7 3.5 zero gate voltage drain current i dss v ds =100v, v gs =0v, t j =25c -0.11a v ds =100v, v gs =0v, t j =125c 2) - 10 100 gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =100a -2.02.5m ? values r ev. 1.0 page 2 2013-01-30
IPB180N10S4-02 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 11240 14600 pf output capacitance c oss - 3660 4760 reverse transfer capacitance c rss - 230 460 turn-on delay time t d(on) -15-ns rise time t r -9- turn-off delay time t d(off) -30- fall time t f -40- gate char g e characteristics 2) gate to source charge q gs -5268nc gate to drain charge q gd -3060 gate charge total q g - 156 200 gate plateau voltage v plateau -4.7-v reverse diode diode continous forward current 2) i s - - 180 a diode pulse current 2) i s,pulse - - 720 diode forward voltage v sd v gs =0v, i f =100a, t j =25c -1.01.2v reverse recovery time 2) t rr - 100 - ns reverse recovery charge 2) q rr - 230 - nc values v gs =0v, v ds =25v, f =1mhz v dd =50v, v gs =10v, i d =180a, r g =1.6 v dd =80v, i d =180a, v gs =0 to 10v 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 0.5k/w the chip is able to carry 242a at 25c. v r =50v, i f =50a, d i f /d t =100a/s t c =25c r ev. 1.0 page 3 2013-01-30
IPB180N10S4-02 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 i d [a] v ds [v] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 z thjc [k/w] t p [s] 0 50 100 150 200 250 300 350 0 50 100 150 200 p tot [w] t c [c] 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 i d [a] t c [c] r ev. 1.0 page 4 2013-01-30
IPB180N10S4-02 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 100 a; v gs = 10 v parameter: t j 1 1.5 2 2.5 3 3.5 4 4.5 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [c] -55 c 25 c 175 c 0 90 180 270 360 450 540 630 720 2468 i d [a] v gs [v] 5 v 5.5 v 6 v 7 v 10 v 0 90 180 270 360 450 540 630 720 012345 i d [a] v ds [v] 5 v 5.5 v 6.0 v 7 v 10 v 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 180 360 540 720 r ds(on) [m ] i d [a] r ev. 1.0 page 5 2013-01-30
IPB180N10S4-02 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 typ. avalanche characteristics if = f(v sd ) i as = f( t av ) parameter: t j parameter: t j(start) 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 i av [a] t av [s] 25 c 175 c 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] ciss coss crss 10 2 10 3 10 4 10 5 0 5 10 15 20 25 30 c [pf] v ds [v] 275 a 2750 a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 v gs(th) [v] t j [c] r ev. 1.0 page 6 2013-01-30
IPB180N10S4-02 13 typical avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 180 a pulsed parameter: v dd 94 96 98 100 102 104 106 108 110 -60 -20 20 60 100 140 180 v br(dss) [v] t j [c] 20 v 80 v 0 2 4 6 8 10 12 0 40 80 120 160 200 v gs [v] q gate [nc] 180 a 90 a 45 a 0 500 1000 1500 2000 2500 25 75 125 175 e as [mj] t j [c] v gs q gate q gs q gd q g v gs q gate q gs q gd q g r ev. 1.0 page 7 2013-01-30
IPB180N10S4-02 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2013 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicat ion of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. r ev. 1.0 page 8 2013-01-30
IPB180N10S4-02 revision history version revision 1.0 date 30.01.2013 changes final data sheet r ev. 1.0 page 9 2013-01-30
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